|تعداد مشاهده مقاله||2,245,300|
|تعداد دریافت فایل اصل مقاله||1,598,086|
|Journal of Electrical and Computer Engineering Innovations (JECEI)|
|مقاله 23، دوره 11، شماره 1، فروردین 2023، صفحه 33-40 اصل مقاله (969.43 K)|
|نوع مقاله: Original Research Paper|
|شناسه دیجیتال (DOI): 10.22061/jecei.2022.8287.503|
|A. Shokri ؛ M. Amirmazlaghani|
|Electrical Engineering Department, Shahid Rajaee Teacher Training University, Tehran, Iran.|
|تاریخ دریافت: 19 دی 1400، تاریخ بازنگری: 14 اردیبهشت 1401، تاریخ پذیرش: 24 اردیبهشت 1401|
|Background and Objectives: The Field-effect Bipolar Junction Transistor (FEBJT) is a device with a bipolar junction transistor (BJT) characteristics except that it is designed with standard CMOS technology. Therefore, it can be implemented in nanometer dimensions without the usual restrictions in fabricating the nanoscale BJTs. In addition to the advantages that FEBJT has as a bipolar junction transistor in analog circuits, it can also be used to design digital circuits. Here, we have investigated the capability of FEBJT as the base of a new digital family in nanometer scales.|
Methods: To do this, we have designed and simulated an inverter logic gate based on FEBJT. We have presented this logic gate's static and dynamic assessment criteria and compared these characteristics with other technologies. Also, a three-stage ring oscillator circuit based on FEBJT is designed and presented. A three-dimensional TCAD Mixed-Mode simulator has been used for the simulations.
Results: The value of maximum frequency, PDP, dynamic power, and ring frequency are calculated 0.25THz, 38×10-17 J, 94uW, and 85GHz, respectively.
Conclusion: The excellent function of the FEBJT-based inverter gate and oscillator demonstrates that this device can be used as the base of new digital circuits and can open a doorway to the nanoscale CMOS digital family.
|Digital circuits؛ BJT؛ FET؛ Inverter logic gate؛ Nanoscale|
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