دانشگاه تربیت دبیر شهید رجائی

  اخبار و اعلانات

 آمار

تعداد نشریات13
تعداد شماره‌ها200
تعداد مقالات2,008
تعداد مشاهده مقاله2,680,169
تعداد دریافت فایل اصل مقاله1,937,362
Kordrostami, Z., Hamedi, S., Khalifeh, F.. (1398). Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs. فناوری آموزش, 7(2), 155-162. doi: 10.22061/jecei.2020.6256.292
Z. Kordrostami; S. Hamedi; F. Khalifeh. "Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs". فناوری آموزش, 7, 2, 1398, 155-162. doi: 10.22061/jecei.2020.6256.292
Kordrostami, Z., Hamedi, S., Khalifeh, F.. (1398). 'Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs', فناوری آموزش, 7(2), pp. 155-162. doi: 10.22061/jecei.2020.6256.292
Kordrostami, Z., Hamedi, S., Khalifeh, F.. Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs. فناوری آموزش, 1398; 7(2): 155-162. doi: 10.22061/jecei.2020.6256.292

Design of High Frequency Single and Double Gate Laterally-Contacted InGaAs/InAlAs HEMTs

Journal of Electrical and Computer Engineering Innovations (JECEI)
مقاله 3، دوره 7، شماره 2، مهر 2019، صفحه 155-162    اصل مقاله (897.29 K)
نوع مقاله: Original Research Paper
شناسه دیجیتال (DOI): 10.22061/jecei.2020.6256.292
نویسندگان
Z. Kordrostami* ؛ S. Hamedi؛ F. Khalifeh
Department of Electrical and Electronic Engineering, Shiraz University of Technology, Shiraz, Iran
تاریخ دریافت: 10 شهریور 1397،  تاریخ بازنگری: 09 اسفند 1397،  تاریخ پذیرش: 20 اردیبهشت 1398 
چکیده
Background and Objectives: High electron mobility transistors (HEMTs) are designed so that they are able to work at higher frequencies than conventional transistors and this has made them an attractive topic of research.
Methods: Two developed designs of InGaAs/InAlAs high electron mobility transistors have been studied. The proposed laterally contacted HEMTs satisfy the desired high frequency characteristics and are good candidates for high frequency applications. Two kinds of HEMTs have been designed and simulated: single-gate laterally contacted HEMT (SGLC-HEMT) and doublegate laterally contacted HEMT (DGLC-HEMT).
Results: The proposed SGLC-HEMT exhibits 111 GHz current-gain cut-off frequency. By using double-gate design, the current-gain cut-off frequency has been increased to 256 GHz. The simulation results show that the maximum oscillation frequency for the proposed SGLC and DGLC HEMTs, are 410 GHz and 768 GHz, respectively. The maximum value of transconductance (gm) for SGLC-HEMT is obtained 620 mS/mm while it is 1130 mS/mm for DGLC-HEMT.
Conclusion: In order to increase the fT and fmax, instead of decreasing the gate length which is a restricted solution because of short channel effects, a very efficient structure was proposed. The designed HEMT benefits from laterally source and drain contacts. The results showed superior performance of the laterally contacted HEMTs compared to top contacted ones. The best frequency response was obtained for DGLC-HEMT. The proposed DG-HEMT design could improve the current-gain cut-off frequency and maximum oscillation frequency to 256 GHz and 768 GHz, respectively. The comparison of the performance of the DGLC-HEMT with SGLC-HEMT and with previously reported double gate HEMTs, verified the significant improvements in DC and AC characteristics of the HEMTs caused by the proposed design.
کلیدواژه‌ها
HEMT؛ Lateral contacts؛ Double gate؛ Cut-off frequency
مراجع

[1] J.-H. Tsai, P.-S. Lin, Y.-C. Chen, S.-H. Liou, J.-S. Niu, "Comparative Studies of AlGaAs/InGaAs Enhancement/Depletion-Mode High Electron Mobility Transistors with Virtual Channel Layers by Hybrid Gate Recesses Approaches," J. Semicond., 53(3): 406-410, 2019.

[2] Y.-S. Lin, B.-Y. Chen, "Effects of surface passivation and temperature on AlGaAs/InGaAs high-electron mobility transistor," Microelectron. Eng, 214): 100-103, 2019.

[3] F. Schwierz, J. J. Liou, "Semiconductor devices for RF applications: evolution and current status," Microelectron. Reliab., 41(2): 145-168, 2001.

[4] T. Enoki, M. Tomizawa, Y. Umeda, Y. Ishii, "0.05-µ m-Gate InAlAs/InGaAs High Electron Mobility Transistor and Reduction of Its Short-Channel Effects," Jpn. J. Appl. Phys., 33(1S): 798, 1994.

[5] S. Zafar, A. Kashif, S. Hussain, N. Akhtar, N. Bhatti, M. Imran, "Designing of double gate HEMT in TCAD for THz applications," presented at the 10th International Bhurban Conference on Applied Sciences and Technology (IBCAST), Islamabad, Pakistan, 2013.  

[6] R. Gupta, S. Rathi, M. Gupta, R. Gupta, "Microwave performance enhancement in Double and Single Gate HEMT with channel thickness variation," Superlattices Microstruct., 47(6): 779-794, 2010.

[7] G. Galiev et al., "Structural and electrical properties of InAlAs/InGaAs/InAlAs HEMT heterostructures on InP substrates with InAs inserts in quantum well," Crystallogr. Rep., 59(6): 900-907, 2014.

[8] V. Kulbachinskii et al., "Experimental determination of the electron effective masses and mobilities in each dimensionally-quantized subband in an In x Ga1− x As quantum well with InAs inserts," Semiconductors, 49(2): 199-208, 2015.

[9] I. S. Vasil’evskiĭ et al., "Electrical and structural properties of PHEMT heterostructures based on AlGaAs/InGaAs/AlGaAs and δ-doped on two sides," Semiconductors, 42(9): 1084-1091, 2008.

[10] N. Maeda, H. Ito, T. Enoki, Y. Ishii, "Dependence on channel potential structures of I–V characteristics in InAlAs/InGaAs pseudomorphic high electron mobility transistors," J. Appl. Phys., 81(3): 1552-1565, 1997.

[11] M. Sexl et al., "MBE growth of double-sided doped InAlAsInGaAs HEMTs with an InAs layer inserted in the channel," J. Cryst. Growth, 175: 915-918, 1997.

[12] T. Takahashi et al., "Enhancement of fmax to 910 GHz by Adopting Asymmetric Gate Recess and Double-Side-Doped Structure in 75-nm-Gate InAlAs/InGaAs HEMTs," IEEE Trans. Electron Devices, 64(1): 89-95, 2017.

[13] T. Takahashi et al., "Maximum frequency of oscillation of 1.3 THz obtained by using an extended drain-side recess structure in 75-nm-gate InAlAs/InGaAs high-electron-mobility transistors," Appl. Phys. Express, 10(2): 024102, 2017.

[14] C. D. Vazquez-Colon, D. C. Look, H. Eric, J. S. Cetnar, A. A. Ayon, "- Simple ohmic contact formation in HEMT structures: application to AlGaN/GaN," presented at the Gallium Nitride Materials and Devices, San Francisco, California, United States, 2019.

[15] M. Hou, G. Xie, K. Sheng, "Improved Device Performance in AlGaN/GaN HEMT by Forming Ohmic Contact With Laser Annealing," IEEE Electron Device Lett., 39(8): 1137-1140, 2018.

[16] S. P. Kurochka, M. V. Stepushkin, V. I. Borisov, "Features of Creating Ohmic Contacts for GaAs/AlGaAs Heterostructures with a Two-Dimensional Electron Gas," Russ. Microlectron., 46(8): 600-607, 2017.

[17] M. Asif, C. Chen, D. Peng, W. Xi, J. Zhi, "Improved DC and RF performance of InAlAs/InGaAs InP based HEMTs using ultra-thin 15 nm ALD-Al2O3 surface passivation," Solid-State Electron., 142: 36-40, 2018.

[18] B. Sun, H. Chang, S. Wang, J. Niu, H. Liu, "ALD Al2O3 passivation of Lg = 100 nm metamorphic InAlAs/InGaAs HEMTs with Si-doped Schottky layers on GaAs substrates," Solid-State Electron., 138: 40-44, 2017.

[19] M. Karbalaei, D. Dideban, N. Moezi, "Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel," (in en), J. Elec. Comput. Eng. Innov.,  7(1): 27-34, 2019.

[20] I. Bahl, Fundamentals of RF and Microwave Transistor Amplifiers. Wiley, 2009.

[21] N. Wichmann, I. Duszynski, S. Bollaert, J. Mateos, X. Wallart, A. Cappy, "100nm InAlAs/InGaAs double-gate HEMT using transferred substrate," presented at the IEEE International Electron Devices Meeting, San Francisco, CA, USA, 2004.  

[22] G. H. Jessen et al., "Short-channel effect limitations on high-frequency operation of AlGaN/GaN HEMTs for T-gate devices," IEEE Trans. Electron Devices, IEEE Transactions on, 54(10): 2589-2597, 2007.

[23] P. S. Park, S. Rajan, "Simulation of short-channel effects in N-and Ga-polar AlGaN/GaN HEMTs," IEEE Trans. Electron Devices, 58(3): 704-708, 2011.

[24] Y. Yamashita et al., "Pseudomorphic In0. 52 Al0. 48 As/In0. 7 Ga0. 3 As HEMT’s with an ultrahigh f of 562 GHz," IEEE Electron Device Lett., 23(10): 573-575, 2002.

آمار
تعداد مشاهده مقاله: 473
تعداد دریافت فایل اصل مقاله: 579


سامانه مدیریت نشریات علمی. قدرت گرفته از سیناوب