|تعداد مشاهده مقاله||2,362,914|
|تعداد دریافت فایل اصل مقاله||1,661,092|
Time-domain Analysis of Traveling Wave Switches based on Time-variant Transmission Line Model
|Journal of Electrical and Computer Engineering Innovations (JECEI)|
|دوره 10، شماره 1، فروردین 2022، صفحه 221-230 اصل مقاله (1.16 M)|
|نوع مقاله: Original Research Paper|
|شناسه دیجیتال (DOI): 10.22061/jecei.2021.8126.483|
|H. Khoshniyat* 1؛ G. Moradi2؛ A. Abdipour2|
|1Electrical Engineering Department, Arak University of Technology, Arak, Iran|
|2Department of Electrical Engineering, Amirkabir University of Technology, Tehran, Iran|
|تاریخ دریافت: 14 خرداد 1400، تاریخ بازنگری: 19 مهر 1400، تاریخ پذیرش: 24 مهر 1400|
|Background and Objectives: Switches play an important role in controlling the signal flow in telecommunication systems. The traveling wave switch structure is introduced based on active transmission lines. By applying the gate voltage (Vg), the transfer of signal through the drain transmission line is controlled. By increasing operating frequency, lumped model is unreliable and semi and fully distributed modeling should be applied for the analysis of these elements. |
Methods: Traveling wave switches can be analyzed based on the lossy transmission line model, in linear and non-linear modes in the time and frequency domains. The study of transient behavior and time domain response of switch is very important. Switching and transient from on to off state and vice versa affect the performance of telecommunication systems.
In the proposed method, the switch is modeled as the lossy transmission line that the primary elements of this model change with time based on the control voltage applied to the gate and are considered as variable with time. The structure is discretized in the space and time domains with ∆z and ∆t steps. The Finite-difference time-domain (FDTD) method is utilized to study the transient response of switches. By using the leap-frog algorithm, the new voltages and currents of the transmission line are calculated based on the values of adjacent spatial and temporal steps.
Results: The transient response of the switch is analyzed in transition from off to on states and vice versa, for the 800µm switch at 60GHz, based on the parameters of the passive transmission line and nonlinear Curtice2 FET model.
Conclusion: For transient analysis of the structure, the time-variant lossy transmission line model was used that its elements changed based on the applied control voltage. The results of FDTD method were investigated with the transient analysis of commercial software that show good agreement with each other and validated the proposed method.
|Finite-difference Time-domain (FDTD) Method؛ Fully-distributed Model؛ Lossy Transmission Line Model؛ Single Pole Single Throw (SPST)؛ Traveling Wave Switch (TWSW)|
 H. Mizutani, Y. Takayama, ”DC-110-GHz MMIC traveling wave switch," IEEE Trans. Microwave Theory Tech., 48(5): 840-845, 2000.
 H. Mizutani, N. Iwata, Y. Takayama, K. Honjo, “Design considerations for traveling-wave single-pole multi throw MMIC switch using fully distributed FET," IEEE Trans. Microwave Theory Tech., 55(4): 664-671, 2007.
 G. L. Lan, D.L. Dunn, J.C. Chen, C.K. Pao, D.C. Wang, “A high performance V-band monolithic FET transmit-receive switch," in Proc. IEEE Microwave Millimeter-Wave Monolithic Circuits Symposium: 99-101, 1988.
 Takasu, F. Sasaki, H. Kawasaki, H. Tokuda, S. Kamihashi, “W-band SPST transistor switches," IEEE Microwave Guided Wave Lett., 6: 315-316, 1996.
 M. Madihian, L. Desclos, K. Maruhashi, K. Onda, M. Kuzuhara, “A high-speed resonance-type FET transceiver switch for millimeter-wave band wireless networks,” in Proc. 26th European Microwave Confrance: 941-944, 1996.
 H. Mizutani, M. Funabashi, M. Kuzuharad, Y. Takayama, “Compact DC-60 GHz HJFET MMIC switches using ohmic electrode- sharing technology," IEEE Trans. Microwave Theory Tech., 46: 1597-1603, 1998.
 G. Shen, W. Che, H. Zhu, F. Xu, Q. Xue, "Analytical design of millimeter-wave 100-nm GaN-on-Si MMIC switches using FET-based resonators and coupling matrix method," IEEE Trans. Microwave Theory Tech., 69(7): 3307-3318, 2021.
 K. -. Lin, Wen-Hua Tu, Ping-Yu Chen, Hong-Yeh Chang, Huei Wang, Ruey-Beei Wu, "Millimeter-wave MMIC passive HEMT switches using traveling-wave concept," IEEE Trans. Microwave Theory Tech., 52(8): 1798-1808, 2004.
 H. Khoshniyat, G. Moradi, A. Abdipour, K. Afrooz, “Optimization and fully distributed analysis of traveling wave switches at millimeter wave frequency band," in Proc. 1st MMWATT Confrance: 45-49, 2009.
 H. Khoshniyat, G. Moradi, A. Abdipour, K. Afrooz, "Optimization and fully-distributed analysis of single-pole single-throw traveling wave switches at millimeter wave frequency band,” Int. J. Inf. Commun. Technol. (IJICT), 3(2): 19-25, 2011.
 F. Thome, P. Brückner, R. Quay, O. Ambacher, "Millimeter-wave single-pole double-throw switches based on a 100-nm gate-length AlGaN/GaN-HEMT technology," in Proc. 2019 IEEE MTT-S International Microwave Symposium (IMS): 1403-1406, 2019.
 S. Kaleem, J. Kühn, R. Quay, M. Hein, "A high-power Ka-band single-pole single-throw switch MMIC using 0.25 µm GaN on SiC," in Proc. 2015 IEEE Radio and Wireless Symposium (RWS): 132-134, 2015.
 H. Khoshniyat, G. Moradi, A. Abdipour, K. Afrooz, "Fully distributed analysis of an improved single pole single throw traveling wave switches," in Proc. 21st Iranian Conference on Electrical Engineering (ICEE 2013): 1-4, 2013
 K.T. Trinh, H. Kao, H. Chiu, N.C. Karmakar, "A Ka-Band GaAs MMIC traveling-wave switch with absorptive characteristic," IEEE Microwave and Wireless Compon. Lett., 29(6): 394-396, 2019.
 H. Mizutani, R. Ishikawa, K. Honjo, "InGaAs MMIC SPST switch based on HPF/LPF switching concept with periodic structure," IEEE Trans. Microwave Theory Tech., 64(9): 2863-2870, 2016.
 H. Khoshniyat, A. Abdipour, G. Moradi, "Fully distributed modeling, analysis and simulation of an improved non-uniform traveling wave structure," AUT J. Model. Simul., 46: 47-52, 2014.
 L. Zhang, X. Cheng, X. Deng, X. Li, "Design of K/Ka-band passive HEMT SPDT switches with high isolation," in proc. 2017 China Semiconductor Technology International Conference (CSTIC): 1-3, 2017.
 C. W. Byeon, C.S. Park, "Design and analysis of the millimeter-wave SPDT switch for TDD applications," IEEE Trans. Microwave Theory Tech., 61(8): 2858-2864, 2013.
 H. Chang, C. Chan, "A low loss high isolation DC-60 GHz SPDT traveling-wave switch with a body bias technique in 90 nm CMOS process," IEEE Microwave Wireless Compon. Lett., 20(2): 82-84, 2010.
 R. Ciocoveanu, R. Weigel, A. Hagelauer, V. Issakov, "A low insertion-Loss 10–110 GHz digitally tunable SPST switch in 22 nm FD-SOI CMOS," in Proc. 2018 IEEE BiCMOS and Compound Semiconductor Integrated Circuits and Technology Symposium (BCICTS): 1-4, 2018.
 W.R. Curtice, “A MESFET for use in design of GaAs ICs,” IEEE Trans. on Microwave Theory Tech., MTT-28: 448-456, 1980.
 K. Afrooz, A. Abdipour, A. Tavakoli, M. Movahhedi, "FDTD analysis of small signal model for GaAs MESFETs based on three line structure," in Proc. 2007 Asia-Pacific Microwave Conference: 1-4, 2007.
 F. Daneshmandian, A. Abdipour, R. Mirzavand, “A three-conductor transmission line model for MOS transistors,” Appl. Comput. Electromagn. Soc. (ACES), 30(6): 670-676, 2015.
 C. R. Paul, Analysis of Multiconductor Transmission Lines, 2nd edition, John Wiley & Sons, Inc., Hoboken, New Jersey, 2008.
 K. Afrooz, A. Abdipour, A. Tavakoli, M. Movahhedi, “Nonlinear and fully distributed field effect transistor modelling procedure using time-domain method,” IET Microwaves Antennas Propag., 2(8): 886-897, 2008.
تعداد مشاهده مقاله: 212
تعداد دریافت فایل اصل مقاله: 173