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Design and Simulation of a Highly Efficient InGaN/Si Double-Junction Solar Cell | ||
Journal of Electrical and Computer Engineering Innovations (JECEI) | ||
مقاله 9، دوره 5، شماره 2 - شماره پیاپی 10، مهر 2017، صفحه 157-162 اصل مقاله (1.26 M) | ||
نوع مقاله: Original Research Paper | ||
شناسه دیجیتال (DOI): 10.22061/jecei.2018.743 | ||
نویسندگان | ||
S.M. Ahmadi؛ F. Parandin* | ||
Department of Electrical Engineering, Kermanshah Branch, Islamic Azad University, Kermanshah, Iran | ||
تاریخ دریافت: 01 آذر 1396، تاریخ بازنگری: 29 آذر 1396، تاریخ پذیرش: 13 دی 1396 | ||
چکیده | ||
A solar cell is an electronic device which not only harvests photovoltaic effect but also transforms light energy into electricity. In photovoltaic phenomenon, a P-N junction is created to form an empty region. The presented paper aims at proposing a new highly efficient InGaN/Si double-junction solar cell structure. This cell is designed to be used in a real environmental situation, so only structural parameters are optimized. In the present structure, a thin layer of Cd-S is used as the anti-reflector window layer. The cell is simulated using ATLAS-SILVACO software and its maximum efficiency is computed to be 37.23%. Considering the supposed structure, the findings show that the efficiency of this solar cell, which is 37.32%, is so far the highest reported efficiency amongst all solar cells. | ||
کلیدواژهها | ||
Solar cell؛ Double-junction solar cell؛ Efficiency؛ Real environmental situation | ||
مراجع | ||
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