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Simulation of IR Detector at Communication Window of 1550nm based on Graphene | ||
| Journal of Electrical and Computer Engineering Innovations (JECEI) | ||
| مقاله 14، دوره 5، شماره 1 - شماره پیاپی 9، فروردین 2017، صفحه 71-77 اصل مقاله (481.85 K) | ||
| نوع مقاله: Original Research Paper | ||
| نویسندگان | ||
| A. Sotoudeh؛ A. Rajabi؛ M. Amirmazlaghani* | ||
| Nano Electronic lab (NEL), Faculty of Electrical Engineering, Shahid Rajaee Teacher Training University | ||
| تاریخ دریافت: 20 خرداد 1396، تاریخ بازنگری: 25 مهر 1396، تاریخ پذیرش: 25 مهر 1396 | ||
| چکیده | ||
| In this paper, photodetection properties of a Graphene-based device at the third telecommunication window have been reported. The structure of the device is a Graphene-silicon Schottky junction which has been simulated in the form of an infrared photodetector. Graphene has specific electrical and optical properties which makes this material a good candidate for optoelectronic applications. Photodetection characteristic of Graphene-silicon Schottky junction is investigated by measuring the (current-voltage) curve at the third telecommunication window under 1550nm radiations. The DC electrical characteristic of the device is calculated. The simulated rectifier junction has a potential barrier of 0.31eV, the ideality factor of 2.7 and the saturation current of 10-11A. The detector responsivity under 1550nm radiations is measured about 20mA/W which is an order of magnitude larger than other Si-based detectors in this wavelength. The internal quantum efficiency (QEin) is calculated about 60% while the external quantum efficiency (QEex) is measured to be 1.6%. A comprehensive theoretical justification is presented based on Fowler theory which allows comparison between the simulation results and the theoretical predictions. For simulating Graphene, a user-defined material is introduced to TCAD-SILVACO software which includes all electrical and optical properties of this novel 2D material. Graphene optical properties, specifically at near-IR region (up to 2um wavelength), have been extracted from the real measurement results. Graphene is a Si-compatible material which can provide a sensitive IR detector integrated with other Si-based devices | ||
| کلیدواژهها | ||
| Infrared detector؛ Graphene؛ Optical telecommunication | ||
| مراجع | ||
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