Karbalaei, M., Dideban, D., Moezi, N.. (1397). Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel. فناوری آموزش, 7(1), 27-34. doi: 10.22061/jecei.2019.5739.252
M. Karbalaei; D. Dideban; N. Moezi. "Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel". فناوری آموزش, 7, 1, 1397, 27-34. doi: 10.22061/jecei.2019.5739.252
Karbalaei, M., Dideban, D., Moezi, N.. (1397). 'Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel', فناوری آموزش, 7(1), pp. 27-34. doi: 10.22061/jecei.2019.5739.252
Karbalaei, M., Dideban, D., Moezi, N.. Improvement of Tunnel Field Effect Transistor Performance Using Auxiliary Gate and Retrograde Doping in the Channel. فناوری آموزش, 1397; 7(1): 27-34. doi: 10.22061/jecei.2019.5739.252


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